sales@twtysemi.com features ? bv dss = 100v ? low threshold device marking ? 410 ZXM41N0F sot23 n-channel enhancement mode vertical d mosfet parameter symbol value unit drain-source voltage v ds 100 v drain-gate voltage v dgr 100 v continuous drain current at t amb =25c i d 170 ma pulsed drain current i dm 680 ma gate-source voltage v gs 20 v power dissipation at t amb =25c p tot 360 mw operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings s o t 2 3 pinout top view parameter symbol min. typ. max. unit conditions drain-source breakdown voltage bv dss 100 v i d =0.25ma, v gs =0v gate-source threshold voltage v gs(th) 0.5 1.5 v i d =1ma, v ds =v gs gate-body leakage i gss 50 na v gs = 20v , v ds =0v zero gate voltage drain current i dss 500 na v ds =100v, v gs =0v static drain-source on-state resistance (1) r ds(on) 8 12 v gs =4.5v, i d =150ma v gs =3v, i d =50ma forward transconductance (1)(2) g fs 80 ms v ds =25v, i d =100ma input capacitance (2) c iss 25 pf v ds =25v, v gs =0v, f=1mhz common source output capacitance (2) c oss 9pf reverse transfer capacitance (2) c rss 4pf turn-on delay time (2)(3) t d(on) 10 ns v dd 30v, i d =280ma rise time (2)(3) t r 10 ns turn-off delay time (2)(3) t d(off) 15 ns fall time (2)(3) t f 25 ns electrical characteristics (at t amb = 25c unless otherwise stated) notes: (1) measured under pulsed conditions. width=300 s. duty cycle 2% (2) sample test. (3) switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator product specification 1 of 1 4008-318-123 http://www.twtysemi.com
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